InAs/GaAs Stacked Lateral Superlattices Grown on Vicinal GaAs (001) Surfaces by Molecular Beam Epitaxy

Abstract

The MBE growth of strained InAs/GaAs lateral superlattices on I vicinal (001) GaAs substrate is reported. The superlattices are produced by depositing alterately fractional monolayers of InAAs and GaAs via step flow growth. We demonstrate the growth of stacked InAs quantum wires array embedded in GaAs matrix. Vertical alignment of the InAs wires in stacked array is evidenced and attributed to stress-induced self-organization growth in lattice mismatched InAs/GaAs material system.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012996

Entities

People

  • A. I. Toropov
  • A. K. Gutakovsky
  • I. A. Panaev
  • S. N. Rechkunov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Contrast
  • Crystal Lattices
  • Electron Diffraction
  • Electron Mobility
  • Electrons
  • Epitaxial Growth
  • Low Temperature
  • Materials
  • Molecular Beam Epitaxy
  • Monomolecular Films
  • Nanostructures
  • Physics
  • Quantum Wires
  • Self Organizing Systems
  • Semiconductor Physics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing