Growth and Structure of Mn=Ca1- chiF2 Epitaxial Films on Si(111)

Abstract

Molecular beam epitaxy was used to grow films of MnF2 and CaF2 solid solutions on Si(111) substrates. The composition of the solutions was measured using oscillations of reflection high energy electron diffraction, electron microprobe analysis and Rutherford backscattering and was in the range from% 10In these solutions. step flow growth mode occurs even at relatively low temperature as 400 C in contrast to pure CaF2. The films have cubic fluorite crystal lattice. Their lattice parameter measured using X-ray diffraction decreases linearly from 0.544 nm to 0.536 nm in the above range.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP013000

Entities

People

  • A. G. Banshchikov
  • L. Hirsch
  • N. L. Yakovlev
  • N. S. Sokolov
  • R. N. Kyutt

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Cleaning
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Diffractometers
  • Electron Diffraction
  • Electron Energy
  • Electrons
  • Energy
  • Films
  • Geometry
  • Measurement
  • Scattering
  • Solid Solutions
  • Two Dimensional
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene