InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices
Abstract
We report on the growth and properties of InGaAsN/GaAs heterostructures and on their applications for lasers emitting at lamba approximately equal 1.3 micrometers. Structures are grown by molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can compete with those of 1.3 micrometers InGaAsP lasers. In particular. we have achieved 300 K operation of broad area lasers at 1.3 micrometers with threshold current density down to 400 A/cm(2) and 650 A/cm(2) for single and triple QW structures. Similar structures with heat sinking at 10 degrees C yield maximum output powers of 2.4 W (cw) and 4 W (pulsed). Ridge waveguide lasers have thresholds down to 16 mA and show cw operation tip to 100 degrees C with a T(o) of up to 110 K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013003
Entities
People
- A. Yu. Egorov
- B. Borchert
- D. Livshits
- H. Riechert
- S. Illek
Organizations
- Russian Academy of Sciences