Theory of Threshold Characteristics of Quantum Dot Lasers

Abstract

A theory of the gain and threshold current of a semiconductor quantum dot (QD) laser has been developed which takes account of the line broadening caused by fluctuations in QD size. Expressions for the threshold current versus the surface density of QDs. QD size dispersion and total losses have been obtained in explicit form. Optimization of the structure has been carried out, aimed at minimizing the threshold current density. The characteristic temperature of QD laser has been calculated considering carrier recombination in the optical confinement layer and violation of the charge neutrality in QDs.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013004

Entities

People

  • L. V. Asryan
  • R. A. Suris

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Current Density
  • Distribution Functions
  • Electronic Mail
  • Electrons
  • Electrostatic Fields
  • Energy Bands
  • Energy Levels
  • Equations
  • Fermi Levels
  • Gaussian Distributions
  • Lasers
  • Low Temperature
  • Optoelectronic Devices
  • Quantum Dot Lasers
  • Quantum Dots
  • Technical Information Centers
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing