Properties of Wide Mesastripe InGaAsP Heterolasers

Abstract

InGaAsP/InP wide mesastripe laser diodes (lambda = 1.3-1.55 microns) grown by metal-organic chemical vaponr deposition (MOCVD) method have been fabricated. Light-current characteristics and emitting spectra under pulse and continuous-wave (CW) operation have been investigated in 10 - 60 C temperature range. Laser diode active region overheating of 30 - 60 K in respect to the copper heatsink at maximum CW drive currents has been determined. Strong influence of the external differential quantum efficiency temperature dependence on CW maximum output power has been established. Optical output powers of 3 W and 2.6 W under CW operation, 9 W and 6.5 W under pulse operation have been reached for a single 100 micron wide aperature mesastripe InGaAsP/InP laser diodes emitting at 1.3 and 1.55 micron wavelengths, respectively.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013005

Entities

People

  • A. V. Lyutetskiy
  • A. Yu. Leshko
  • E. G. Golikova
  • N. A. Pikhtin
  • V. A. Kureshov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Crystal Lattice Vibrations
  • Efficiency
  • Electronic Mail
  • Energy Bands
  • Hard Copy
  • Heterojunctions
  • Laser Diodes
  • Lasers
  • Optoelectronic Devices
  • Quantum Efficiency
  • Quantum Wells
  • Radiation
  • Solid Solutions
  • Technical Information Centers
  • Waveguides

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Directed Energy
  • Quantum Computing