The Power of Catastrophic Optical Mirror Degradation in InGaAs/AlGaAs/GaAs QW Laser Diodes

Abstract

We report on the fabrication and characteristics of conventional QW SCH InGaAs/AlGaAs broad area laser diodes. The detailed investigation of 100 micrometers striped contact laser diodes produced by MBE technique shows the strong dependence of a differential quantum efficiency (T(1)= 28O-42O K) on temperature. This factor gives the strong influence on the output power. The power of catastrophical optical mirror degradation of InGaAs/AlGaAs laser diodes may reach practically the same (20 MW/cm(2)) data as for Al-free laser diodes. The output power of 6.3 W (CW, 280 K) in InGaAs/AlGaAs QW SCH 100 micrometer stripe is achieved.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013010

Entities

People

  • A. A. Katsnelson
  • D. A. Livshits
  • E. Yu. Kotelnikov
  • V. P. Evtikhiev
  • W. Richter

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Efficiency
  • Energy Bands
  • Heterojunctions
  • High Temperature
  • Laser Diodes
  • Lasers
  • Materials
  • Optoelectronic Devices
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing