Intersubband Population Inversion Under Resonance Tunneling in Wide Quantum Well Structures

Abstract

Theoretical estimates and the results of vertical transport and optical investigations In GaAs/AlGaAs structures show that resonant tunneling can lead efficiently to selective depopulation of the levels resulting in a population inversion and possible stimulated emission due to intersubband transitions between the lowest states in wide-quantum-well structures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013011

Entities

People

  • A. L. Karuzskii
  • I. P. Kazakov
  • V. A. Chuenkov
  • V. N. Murzin
  • Yu. A. Mityagin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Crystal Lattice Vibrations
  • Electric Fields
  • Electrical Properties
  • Electron Scattering
  • Electrons
  • Emission
  • Energy Levels
  • Free Electrons
  • Ground State
  • Impurities
  • Optoelectronic Devices
  • Phonons
  • Quantum Wells
  • Scattering
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing