Interaction Between Landau Levels of Different Two-Dimensional Subbands in GaAs

Abstract

Tunneling studies measurements between strongly disordered two-dimensional electron systems in a magnetic field parallel to the current are presented. Two-dimensional electron systems are formed by Si delta doping of GaAs on both sides of the AlGaAs barrier. Strong interaction between Landau levels of different two-dimensional subbands in GaAs have been observed as anticrossing of related peak positions with magnetic field. The splitting of the interacted Landau levels is about 10 meV, which could not be explained by non-parabolicity of the conduction band in GaAs. The possible reasons of the observed interaction are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013014

Entities

People

  • D. Yu. Ivanov
  • E. E. Vdovin
  • E. Takhtamirov
  • V. A. Volkov
  • Yu. V. Dubrovskii

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Atomic Structure
  • Conduction Bands
  • Elastic Scattering
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Ground State
  • Magnetic Fields
  • Materials
  • Quantum Tunneling
  • Scattering
  • Technical Information Centers
  • Tunneling
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene