Electron Spin Relaxation in Zinc-Blende Heterostructures

Abstract

Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (Dyakonov-Perel and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the 001 direction, the main axes of spin relaxation rate tensor are 110 and 110.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013019

Entities

People

  • L. E. Golub
  • M. Willander
  • N. S. Averkiev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Anisotropy
  • Conduction Bands
  • Data Analysis
  • Electric Fields
  • Electron Gas
  • Electronics
  • Electrons
  • Experimental Data
  • Hard Copy
  • Heterojunctions
  • Quantum Properties
  • Quantum Wells
  • Relaxation Time
  • Scattering
  • Semiconductors
  • Spin-Orbit Interaction
  • Technical Information Centers

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots