Resonant States and Terahertz Generation in Strained Semiconductors and Semiconductors Nanostructures

Abstract

This article presents a short review of theoretical investigation of resonant states induced by shallow acceptors in uniaxially strained semiconductors mechanism of population inversion induced by external electric field experimental results, and consideration of possible nanostructure for THz resonant states lasers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013022

Entities

People

  • I. N. Yassievich
  • K. A. Chao
  • M. S. Kagan

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Angular Momentum
  • Coherent Radiation
  • Continuous Spectra
  • Crystal Lattice Vibrations
  • Crystals
  • Electric Fields
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Ground State
  • Lasers
  • Optomechanics
  • Scattering
  • Semiconductor Lasers
  • Semiconductors
  • Total Angular Momentum
  • Valence Bands

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Structural Dynamics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene