Terahertz Emission of SiGe/Si Quantum Wells Doped With Shallow Acceptors

Abstract

THz emission of stimulated character is observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by well parallel QW structure planes owing total internal reflection is necessary for the emission. The model of possible population inversion of strain-split acceptor levels is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013023

Entities

People

  • I. V. Altukhov
  • K. L. Wang
  • M. S. Kagan
  • S. G. Thomas
  • V. P. Sinis

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Electric Fields
  • Emission
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Ground State
  • Inversion
  • Low Temperature
  • P-N Junctions
  • Quantum Wells
  • Radiation
  • Semiconductors
  • Technical Information Centers
  • Total Internal Reflection
  • Transverse
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing