Mid Infrared Range Laser Based on Intersubband Transitions and Resonant Auger Processes in Quantum Wells

Abstract

A new type of mid infrared semiconductor laser based on intersubband optical electron transitions in type II quantum wells with electrical or optical pumping is suggested. Inversion of population is created due to special shape of quantum well and resonant Auger recombination providing additional pumping of excited level.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013024

Entities

People

  • D. A. Firsov
  • G. G. Zegrya
  • L. E. Vorobjev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Electron Electron Interactions
  • Electron Transitions
  • Electrons
  • Emission
  • Energy Levels
  • Excitation
  • Ground State
  • Lasers
  • Nanostructures
  • Optical Pumping
  • Quantum Cascade Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Transitions
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing