Optical Absorption and Birefringence in GaAs/AlAs MQW Structures Due to Intersubband Electron Transitions

Abstract

For the first time the electrooptical phenomena due to intersubband electron transitions were investigated in GaAs/AlAs MQW structures. These structures are purposed for creation a mid infrared laser of new type. Experimental results on electron redistribution between size- quantization levels under electron heating were obtained up to electric field of 3500 V/cm.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013025

Entities

People

  • D. A. Firsov
  • I. E. Titkov
  • L. E. Vorobjev
  • S. N. Danilov
  • V. A. Shalygin

Organizations

  • Russian Academy of Sciences

Tags

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Electric Fields
  • Electron Mobility
  • Electron Transitions
  • Electrons
  • Laser Beams
  • Lasers
  • Modulation
  • Optical Absorption
  • Quantum Cascade Lasers
  • Quantum Wells
  • Scattering
  • Semiconductor Lasers
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics