MBE Grown Ge Nanostructures on CaF(2)/Si(111)

Abstract

Germanium nanocrystals were grown on CaF(2)/Si( 111) by molecular beam epitaxy. Specific features of Ge and CaF(2) growth have been analyzed in this work using electron diffraction and atomic force microscopy Well-pronounced Ge quantum dots were observed in case of growth on thick CaF(2) buffer.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013027

Entities

People

  • L. V. Sokolov
  • M. M. Moisseeva
  • N. S. Sokolov
  • O. P. Pchelyakov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Cleaning
  • Crystals
  • Electron Beams
  • Electron Diffraction
  • Electron Microscopes
  • Electrons
  • Epitaxial Growth
  • Films
  • Low Temperature
  • Materials
  • Materials Science
  • Microscopy
  • Nanostructures
  • Optoelectronic Devices
  • Quantum Dots
  • Semiconductor Physics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing