Novel Cd(Se,Te)/BeTe Nanostructures: Fabrication by Molecular Beam Epitaxy and Properties

Abstract

IN CONCLUSION. CdSe/BeTe type-il nanostructures have been grown by MBE on GaAs substrates and studied by RHEED. XRD and PL for the first time. These structures demonstrate extremely high sensitivity to the interface bond type (BeSe or CdTe). with the CdTe interfaces providing much higher structural quality and PL intensity. Formation of the first CdTe interface, controlled by RHEED at the 0.1 ML level, causes radical variation of the structure morphology at a similar CdSe nominal thickness in the 1.0-1.5 ML range. it may be changed from the well defined homogeneous Cd(Se.Te) QW in the case of the smooth interface to the array of CdSe-based nanoislands (or QDs) coupled by much thinner QW in the case of non-uniform locally strained interface. However. final conclusion on the intrinsic morphology of these structures needs high resolution transmission electron microscopy studies. which are currently under the way.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013028

Entities

People

  • G. Reuscher
  • S V Ivanov
  • T. Gruber
  • T. Muck
  • V. Wagner

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Band Structures
  • Electron Microscopy
  • Energy
  • Energy Bands
  • High Energy
  • High Resolution
  • Intensity
  • Low Temperature
  • Molecular Beams
  • Nanostructures
  • Optical Properties
  • Quantum Dots
  • Quantum Wells
  • Spectra
  • Technical Information Centers
  • Thickness
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene