Optical and Structural Properties of BeCdSe/ZnSe QW Heterostructures Grown by MBE

Abstract

In summary SQW and MQW structures of different thicknesses (2-10 nm) based on a new II-VI compositional material Be(x)Cd(1-x)Se with a Be content ranging from 33% to 50% have been grown by MBE using different growth modes. The structures have demonstrated bright PL up to room temperature and no phase separation phenomena in the vicinity of x = 0.46 corresponding to a composition lattice-matched to GaAs. Large energy gap bowing (C = 4.5 eV), refined using new experimental PL data, permits one to consider BeCdSe alloys with large Be content as suitable materials for a QW active region of ZnSe-based blue-green laser diodes.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013029

Entities

People

  • O. V. Nekrutkina
  • P. S. Kop'ev
  • S V Ivanov
  • T. V. Shubina
  • V. A. Kaygorodov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattices
  • Diffraction
  • Diffractometers
  • Electron Diffraction
  • Energy
  • Energy Gaps
  • Laser Applications
  • Laser Diodes
  • Lasers
  • Low Temperature
  • Materials
  • Measurement
  • Optical Properties
  • Phase
  • Phase Separation
  • Quantum Wells
  • Structural Properties

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy