The Influence of Bi Doping of the InAs/GaAs Quantum Dots on Morphology and Photoelectronic Properties of the Heterostructures Obtained by MOVPE

Abstract

Bi doping of InAs quantum dots layer during growth by MOVPE depresses coalescence of nanoclusters and advances obtaining more uniform distribution Of quantum dots size. Bi itself is practically not being incorporated into the QD material. Its role consists in limitation of In and As atoms diffusion mobility on the growing layer surface.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013030

Entities

People

  • B. N. Zvonkov
  • D. O. Filatov
  • I. A. Karpovich
  • N. V. Baidus
  • Sergey V. Morozov

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Barometric Pressure
  • Coalescence
  • Continuous Spectra
  • Electric Fields
  • Electron Holes
  • Energy
  • Energy Bands
  • Hard Copy
  • High Energy
  • Materials
  • Nanostructures
  • Optical Properties
  • Physics
  • Quantum Dots
  • Spectra
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing