Influence of Annealing on the Formation of InGaAs Quantum Dots in GaAs Matrix During Metal Organic Chemical Vapor Deposition

Abstract

Structure investigations of InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrate at various growth conditions were carried out by transmission electron microscopy. Incomplete covering of InGaAs QD layer by a thin GaAs spacer grown at 480 degrees C followed by annealing at 600 degrees C is shown to result in removal of developed defect structure observed in unannealed samples. The growth of three InGaAs QD layers separated by GaAs spacers using the same treatment algorithm for each InGaAs QD layer led to perfect QD system formation.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013033

Entities

People

  • I. V. Kochnev
  • N. A. Bert
  • N. A. Cherkashin
  • N. N. Ledentsov
  • V. M. Lantratov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Charge Carriers
  • Chemical Vapor Deposition
  • Contrast
  • Coverings
  • Electron Microscopy
  • Energy
  • Materials
  • Microscopes
  • Nanostructures
  • Quantum Dots
  • Reflection
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional
  • Transmission Electron Microscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing