Monte Carlo Simulation of Quantum Dots Formation During Heteroepitaxy

Abstract

Formation of quantum dots (QD's) during heteroepitaxial growth was investigated by Monte Carlo simulation. Shwoebel barriers for explanation of QD's growth kinetic were suggested. Two different barriers for hops to the upper and lower layers were introduced in our model. Ranges of these barriers for QD's formation were estimated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013036

Entities

People

  • A. V. Zverev
  • I. G. Neizvestny
  • L. N. Safronov
  • N. L. Shwartz
  • Z. Sh. Yanovitskaja

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compression
  • Crystals
  • Diffusion
  • Epitaxial Growth
  • Films
  • Hard Copy
  • Materials
  • Materials Science
  • Monomolecular Films
  • Monte Carlo Method
  • Nanostructures
  • Phase Diagrams
  • Quantum Dots
  • Semiconductor Physics
  • Semiconductors
  • Simulations
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Ocean-Atmosphere Mesoscale Modeling, Data Assimilation, and Flux Boundary Layers
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Statistical inference.

Technology Areas

  • Quantum Computing