Simulation of Pores Sealing During Homoepitaxy on Si(111) Surface

Abstract

Simulation of homoepitaxy process on porous Si(111) using 3D Monte Carlo model was carried out to give estimation of necessary dose for complete pores overgrowth of different sizes porosity and various deposition flux intensities for given temperature.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013037

Entities

People

  • A. V. Zverev
  • I. G. Neizvestny
  • N. L. Shwartz
  • Z. Sh. Yanovitskaja

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Structure
  • Atoms
  • Crystals
  • Diameters
  • Diffusion
  • Diffusion Coefficient
  • Epitaxial Growth
  • Hard Copy
  • Heat Of Activation
  • Materials
  • Nanostructures
  • Porosity
  • Semiconductor Physics
  • Semiconductors
  • Simulations
  • Substrates
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Rocket Propulsion.
  • Semiconductor Device Technology
  • Statistical inference.