MBE-Grown CaF2 Nanostructures on Si(001)

Abstract

Atomic force microscopy and reflection high energy electron diffraction have been used to study initial stages of CaF(2) epitaxial growth and formation of nanostructures on Si(001). A variety of nanostructures has been observed including ultra-thin two-dimensional layers at 750 degrees C, quasi one-dimensional wires at 650 degrees C and well-ordered dots of almost equal size at lower growth temperatures. An attempt has been made to understand the influence of the growth parameters on the orientation and shape of the resulting nanostructures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013039

Entities

People

  • N. S. Sokolov
  • S. M. Suturin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Cleaning
  • Diffusion
  • Electron Diffraction
  • Energy
  • Epitaxial Growth
  • Hard Copy
  • High Energy
  • High Temperature
  • Magnetoelectronic Devices
  • Molecular Beams
  • Nanostructures
  • Nucleation
  • Orientation (Direction)
  • Quantum Wells
  • Substrates
  • Technical Information Centers
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene