Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

Abstract

This report investigated the optical properties of heterostructures with InGaAsN/ GaAs QW-like and QD-like insertions. GaAsN and InGaAsN layers with relatively high nitrogen content (more than 1%) were grown. The long wavelength emission tip to 1.32 microns at room temperate was realized. TEM and optical studies confirm formation of quantum dots for the case of higher indium concentrations.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013041

Entities

People

  • A. R. Kovsh
  • B. V. Volovik
  • H. Kuenzel
  • W. Passenberg
  • Yu. G. Musikhin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Communication Systems
  • Conduction Bands
  • Current Density
  • Diffraction
  • Distributed Bragg Reflectors
  • Electron Microscopy
  • Heterojunctions
  • High Temperature
  • Microscopes
  • Optical Properties
  • Quantum Dots
  • Quantum Wells
  • Spectra
  • Surface Emitting Lasers
  • Transmission Electron Microscopy
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing