Raman and Hot Electron-Neutral Acceptor Luminescence Studies of Electron-Optical Phonon Interactions in GaAs/Al(x)Ga(1-x)As Quantum Wells

Abstract

Using two optical techniques we have studied the hot electron-optical phonon interactions in GaAs/Al(x)Ga(1-x)As multiple quantum wells. Raman scattering measurements at 15 K are presented for the Al composition of x = 0.3, 0.5, 0.7 and l.0. The GaAs-like and AlAs-like phonon frequencies of the first-order modes are also measured as a function of Al compositions. The optical phonon energies emitted by the photoexcited electrons in quantum wells are determined by using hot electron-neutral acceptor luminescence techniques. It is shown that the relaxation of hot electrons in the quantum wells is dominated by the GaAs LO phonon emission for small x. but by AlAs-like LO phonons for larger Al composition.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013046

Entities

People

  • C. M. Yang
  • H. Y. Chang
  • Kexu Sun
  • S. Y. Wang
  • T. S. Song

Organizations

  • National Chiao Tung University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Dye Lasers
  • Electron Energy
  • Electrons
  • Energy
  • Frequency
  • Lasers
  • Lattice Dynamics
  • Liquid Dye Lasers
  • Quantum Wells
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing