Band Alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW Structures Grown on GaAs(100) by MBE
Abstract
MBE-grown ZnTe/CdZnTe/ZnTe and ZnSe/ZnCdSe/ZnSe strained single quantum well (SQW) structures with non-doping layers were investigated by cathodoluminescence (CL) and deep level transient spectroscopy (DLTS). Obtained DLTS and CL results were used for the estimation of the conduction band offset parameter Qc.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013051
Entities
People
- V. G. Litvinov
- V. I. Kozlovsky
- Yu. G. Sadofyev
Organizations
- Russian Academy of Sciences