Multiphonon Relaxation in ZnSe Thin Films and ZnSe/ZnCdSe Superlattice

Abstract

The photoluminescence (PL) and resonant Raman scattering (RRS) spectra of thin films and multiple quantum well (MQW) structures were investigated at room temperature. The light scattering spectra of MQW consist of intensive band of the quantum wells luminescence and additional narrow bands. The energy shift of these additional bands was equal to the multiple value of longitudinal oscillation phonon of the strained ZnSe barriers. The intensity of these bands is resonance amplified at approaching the excitation radiation frequency to MQW luminescence bands frequency. We suppose, that this process consists of several stages: absorption of stimulating light by quantum wells; exchange of energy between hot electrons and barriers; relaxation of system including longitudinal phonon generations in barriers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013053

Entities

People

  • L. K. Vodop'yanov
  • N. N. Melnik
  • T. N. Zavaritskaya
  • Yu. G. Sadofyev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Coherent Radiation
  • Electron Holes
  • Electrons
  • Energy Bands
  • Excitation
  • Films
  • Frequency
  • Light Scattering
  • Luminescence
  • Quantum Wells
  • Raman Scattering
  • Scattering
  • Semiconductors
  • Solid Solutions
  • Spectra
  • Thickness
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing