Built-In Electric Fields and Electronic Structure of GaN/AlN QDs

Abstract

We present a theory of the electronic structure of GaN/AIN QDs including built-in strain and electric field effects. A simple analytical formula is derived for the Fourier transform of the built-in electrostatic potential. The QD carrier spectra and wave functions are calculated using an original method we have developed based on an 8-band k.P model. It is shown that due to the strong built-in electric field, the holes are localized in the wetting layer just below the QD bottom, while electrons are pushed up to the pyramid top. The energy of the ground optical transition is found to be in good agreement with available experimental data.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013055

Entities

People

  • Andrey D. Andreev
  • E. P. O'reilly

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Crystal Structure
  • Electric Fields
  • Electrons
  • Energy Bands
  • Energy Levels
  • Experimental Data
  • Ground State
  • Heterojunctions
  • Optical Properties
  • Polarization
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Shape
  • Spatial Distribution
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics