Argon Plasma Etching of Gallium Nitride: Spectroscopic Surprises
Abstract
It is shown that bulk reactive-ion-etched MOVPE-grown GaN can exhibit dramatically increased near-band-edge and below-band-gap emission when compared with unetched samples. A detailed spectroscopic study reveals firstly that donor bound excitons are the dominant species in the near-band-edge emission and secondly that previous models of the yellow luminescence band must be revised due to the clear linkage between the yellow emission and a little studied blue emission band, UV illumination on over a period of time enhances the yellow emission by a factor of 20 at room temperature, and it is shown that this effect can be employed for optical data storage and retrieval.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013056
Entities
People
- C. Kirchner
- M. Kamp
- R. Cheung
- R. J. Reeves
- Steven A. Brown
Organizations
- University of Canterbury