Effect of Annealing on Phase Separation in Ternary III-N Alloys
Abstract
The report investigated temperature dependence of photoluminescence for different types of structures with ternary III-N alloys. It is shown that optical properties can be strongly affected by composition fluctuations in AlGaN or InGaN alloys. For AlGaN layers rapid thermal annealing leads to effective decrease in nonuniformity. while for InGaN multilayer structure with dense arrays of quantum dots RTA leads to increase in phase separation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013060
Entities
People
- A. S. Usikov
- A. V. Sakharov
- E. E. Zavarin
- I. L. Krestnikov
- W. V. Lundin
Organizations
- Russian Academy of Sciences