Regular Trends in Fine Structure and Localization of Excitons in Type II GaAs/AlAs Superlattices With a Gradient of Composition

Abstract

Optically detected magnetic resonance and level anticrossing spectroscopy were used to reveal regular trends in the behavior of the fine structure of excitons, their dynamic properties and localization at the opposite interfaces in type II GaAs/AlAs superlattices grown by MBE with a gradient of layer thicknesses in the SL plane.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013070

Entities

People

  • A. Hofstaetter
  • A. Scharmann
  • B. K. Meyer
  • N. G. Romanov
  • P. G. Baranov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Electrons
  • Emission
  • Emission Spectra
  • Energy
  • Excitons
  • High Energy
  • Linear Polarization
  • Luminescence
  • Magnetic Fields
  • Magnetic Resonance
  • Polarization
  • Quantum Wells
  • Resonance
  • Spectra
  • Spectroscopy
  • Splitting

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene