Fluctuation-Trapped Exciton States in 2D-Semiconductor Solid Solutions

Abstract

Exciton localization in quantum wells formed by solid solutions has been studied both theoretically and experimentally. The method for calculation of the density of fluctuation states below the edge of two-dimensional exciton band and the spectral density of exciton transitions is developed. The classification of states in respect to its migration properties and contribution to the luminescence processes has been carried out using the continual percolation theory. The shape of emission and absorption bands, as well as the position of mobility edge are calculated. The results of calculations are in good agreement with the optical spectra of ZnCdSe- and GaInAs-based QW structures.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013073

Entities

People

  • A. Klochikhin
  • A. Reznitsky
  • L. Tenishev
  • S. Sorokin
  • S. V. Ivanov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Emission
  • Emission Spectra
  • Energy
  • Energy Transfer
  • Ground State
  • Hard Copy
  • Luminescence
  • Mobility
  • Physics
  • Quantum Wells
  • Semiconductors
  • Solid Solutions
  • Spectra
  • Technical Information Centers
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing