Time-Resolved Studies of Exciton Recombination in Direct-Gap GaAs/AlAs Superlattices

Abstract

The temperature dependence of the recombination dynamics of excitons was investigated by time-resolved photoluminescence spectroscopy in direct-gap GaAs/AlAs superlattices. Peculiarities of excitonic photoluminescence decay were established in the dependence of the well width. In particular it was shown that a reduction of the well width results in faster exciton recombination due to an enhancement of interface influence.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013074

Entities

People

  • D. V. Korbutyak
  • H. T. Grahn
  • K. Ploog
  • Sergiy Krylyuk
  • V. G. Litovchenko

Organizations

  • National Academy of Sciences of Ukraine

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Conduction Bands
  • Dynamics
  • Excitons
  • Hard Copy
  • High Temperature
  • Intensity
  • Ion Lasers
  • Lasers
  • Low Temperature
  • Molecular Beam Epitaxy
  • Nanosecond Time
  • Physics
  • Semiconductor Physics
  • Semiconductors
  • Spectra
  • Technical Information Centers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics