Carrier Accumulation due to Insertion of Nanoscale As Clusters into n- and p-Type GaAs

Abstract

Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers As a result of the majority carrier accumulation a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equaflon showed the concentration of accumulated charge carriers to be as high as (similar or equal) 1 x 10(exp12) cm (-2) which is comparable with concentration of As clusters determined from transmission electron microscopy study.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013079

Entities

People

  • A. A. Suvorova
  • A. V. Chernigovskii
  • N. A. Bert
  • P. N. Brunkov
  • V. V. Chaldyshev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Charge Carriers
  • Dielectric Permittivity
  • Electron Emission
  • Electron Microscopes
  • Electrons
  • Emission
  • Experimental Data
  • Low Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Microscopy
  • Nanostructures
  • Photoexcitation
  • Poisson Equation
  • Semiconductor Physics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics