In-Situ STM Analysis and Photoluminescence of C-Induced Ge Dots

Abstract

Molecular beam epitaxy has been utilized to grow small C induced Ge islands in silicon. Using in-situ STM analysis, it is shown that the amount of C deposited on the Si(l00) surface prior to Ge growth permits the control of lateral size and height of Ge quantum dots. The Ge grows in a Volmer-Weber growth mode in areas between the C-rich patches on the Si surface. Thus laterally smaller but higher dots are found with increasing C coverage. Accordingly, intense photoluminescence (PL) with a stronger confinement shift in dependence on the Ge coverage is observed for samples prepared with large C concentrations. The impact of the Si spacer layer width on the dot size has been studied by TEM and compared to PL data.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013086

Entities

People

  • A . Beyer
  • D. Gruetzmacher
  • Eric V. Mueller
  • O. Leifeld
  • S. Stutz

Organizations

  • Paul Scherrer Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Electron Microscopy
  • Electrons
  • Hard Copy
  • Intensity
  • Microscopy
  • Monomolecular Films
  • Nanostructures
  • Nanotechnology
  • Nucleation
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum States
  • Technical Information Centers
  • Three Dimensional
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing