Optical Properties and Structure of Si/InAs/Si Layers Grown by MBE on Si Substrate

Abstract

Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 8OO degrees C was investigated by High Resolution Transmission Electron Microscopy (HRTEM). Extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of 6mm, which exhibit two kinds of ordering are observed. The ordering of InAs molecules has occurred. The sample show photoluminescence in the 1.3 micrometer region, which is tentatively attributed to the recombination of excitons localized in the ordered regions.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013087

Entities

People

  • G. E. Cirlin
  • N. D. Zakharov
  • P. Werner
  • U. Goesele
  • V. M. Ustinov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Argon Lasers
  • Band Gaps
  • Diffraction
  • Electron Microscopy
  • Energy Bands
  • High Resolution
  • Low Temperature
  • Materials
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanostructures
  • Optical Properties
  • Solid Solutions
  • Substrates
  • Technical Information Centers
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics