Tunneling Spectroscopy of Nonequilibrium Interacting Impurity States on Semiconductor Surface

Abstract

New STM/STS observation method has been used for investigation of interacting nonequilibrium impurity states on semiconductor surface. The dependence of electronic density spatial distribution on applied tunneling voltage is analyzed. Energy values of "switching on and off" of interatomic interactions are determined. The dependence of Cr impurity dangling bond hybrid orbital electron spatial localization on tunneling bias is observed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013089

Entities

People

  • N. S. Maslova
  • S. I. Oreshkin
  • S. V
  • V. I. Panov

Organizations

  • Moscow State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Calorific Value
  • Conductivity
  • Crystal Lattices
  • Electron Density
  • Electronic States
  • Electrons
  • Hard Copy
  • Impurities
  • Low Temperature
  • Quantum Tunneling
  • Semiconductors
  • Spatial Distribution
  • Spectra
  • Technical Information Centers
  • Tunneling

Fields of Study

  • Physics

Readers

  • Combustion Dynamics and Shock Wave Physics.
  • Quantum Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster