Control of Photocurrent Relaxation in GaAs/AlGaAs Nanostructures

Abstract

Strong influence of an interband carrier generation on deep states relaxation in GaAs/AlGaAs nanostructures has been found. Considerable variation of relaxation time, sign and amplitude of impurity photoconductivity (PC) signal has been detected at rather low interband excitation. In single quantum well structures the additional interband excitation results in strong (more, than 10(exp3 times) decrease of a deep states relaxation time. In modulation doped GaAs struc- tures the interband generation results in long-time negative photoconductivity signal with decay time controlled by the interband generation intensity. The effect may be used for the analysis of deep states distribution in GaAs/AlGaAs nanostructures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013092

Entities

People

  • I. P. Kazakov
  • M. V. Valeyko
  • N. A. Volchkov
  • S. P. Grishechkina

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplitude
  • Background Radiation
  • Demographic Cohorts
  • Electric Fields
  • Electron Transitions
  • Electrons
  • Energy Bands
  • Excitation
  • Intensity
  • Lasers
  • Quantum Wells
  • Radiation
  • Relaxation Time
  • Semiconductor Lasers
  • Semiconductors
  • Transitions
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing