Formation of Defect-Free InGaAs-GaAs Quantum Dots for 1.3 Micrometers Spectral Range Grown by Metal-Organic Chemical Vapor Deposition
Abstract
TThis document investigated structural and optical properties of MOCVD-grown single and stacked InGaAs insertions formed with and without annealing step after thin layer overgrowth. We found that this ovrergrowth/annealing procedure results in elimination of dislocated InGaAs clusters, thus, only the structures grown with such an approach are suitable for long-wavelength laser applications for the growth mode chosen in this work. Additionally. according to our results, growth of stacked long-wavelength QDs is principally possible only when QDs are subiected to the clustenelimination procedure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013096
Entities
People
- D. A. Bedarev
- I. L. Krestnikov
- I. V. Kochnev
- M. V. Maximov
- N. N. Ledentsov
Organizations
- Russian Academy of Sciences