Properties of InAs Quantum Dots on Silicon(001) and (111)

Abstract

The self assembled formation of InAs Quantum Dots (QDs) on silicon has been studied by RHEED, AFM, Raman and TEM. On Si(001) up to 10(exp11)cm(-2) InAs QDs can either be grown in a conventional growth mode, or by utilizing a postgrowth dewetting transition at decreasing substrate temperatures. On Si( 111) instead, QDs only form on an As-passivated surface. Otherwise InAs grows in large 2D clusters.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013098

Entities

People

  • A. Ankudinov
  • F. Bensing
  • G. Ade
  • Jeffrey Wagner
  • Louise L. Hansen

Organizations

  • University of Würzburg

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Defects
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystals
  • Dislocations
  • Electron Holes
  • Materials
  • Nanostructures
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum Wires
  • Raman Spectroscopy
  • Semiconductors
  • Spectra
  • Substrates
  • Technical Information Centers
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing