Carrier Relaxation Dynamics in Self-Assembled Quantum Dots
Abstract
A novel technique to study carrier relaxation dynamics based on the artificial control of nonradiative losses by an external electric field is proposed. A clear evidence of phonon assisted relaxation as the main relaxation mechanism of hot electron-hole pairs in InP self-assembled quantum dots is found by the proposed method. Efficient one step relaxation processes with emission of acoustic and optical phonons are observed. These findings give new and important insight into the interaction of the electron-hole pairs in quantum dots with the phono subsystem.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013102
Entities
People
- I. E. Kozin
- I. V. Ignatiev
- J. Lee
- S. V. Nair
- V. Davydov
Organizations
- Saint Petersburg State University