Emission Line Instabilities of Single Quantum Dots of InAs in GaAs

Abstract

We have measured the energy levels of quantum dots of InAs in GaAs as a function of time. On a very slow time scale there is a shift in energy for some dots. This shift can be enhanced by annealing the sample at different temperatures up to room temperature. The data are consistent with a model based on defects interacting with the dots.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013104

Entities

People

  • L. Samuelson
  • M. E. Pistol
  • M. P. Persson
  • M. S. Miller
  • N. Panev

Organizations

  • Lund University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Electrical Engineering
  • Emission
  • Energy
  • Energy Levels
  • Engineering
  • Ground State
  • Heat Treatment
  • High Temperature
  • Measurement
  • Physics
  • Quantum Dots
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectral Lines
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots