1.3 Micrometers Photoluminescence Emission from InAs/GaAs Quantum Dots Multilayer Structures

Abstract

Optical properties of multilayer structures with quantum dots InAs on GaAs are investigated. It is shown that under optimal growth conditions the 1.3 micrometers emission could be achieved. Possible scenarios Of quantum dots behaviour evaluation is discussed in a frame of elastic theory to explain differences in optical properties of the grown structures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013108

Entities

People

  • B. V. Volovik
  • G. E. Cirlin
  • N. K. Polyakov
  • V. A. Egorov
  • V. N. Petrov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computer Simulations
  • Detectors
  • Emission
  • Fiber-Optic Communications
  • Hard Copy
  • Instrumentation
  • Laser Diodes
  • Lasers
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum Wells
  • Quantum Wires
  • Solid Solutions
  • Spectra
  • Technical Information Centers
  • Thickness

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing