Photoluminescence of InAs/GaAs Quantum Dots Under Hydrostatic Pressure

Abstract

The baric dependencies (0-20 kbar) of luminescence spectra (77 K) of InAs quantum dots have been investigated. InAs quantum dots on vicinal substrates GaAs at misorientation angle 3OO1, 7OO1 and 7O11 were grown. At P = 0 in the luminescence spectra a set of lines 1.235, 1,290, 1.343 eV of quantum dots of different sizes with base lengths 8-9 nm was observed. The dependence of baric coefficients on size of quantum dot was found out.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013109

Entities

People

  • B. S. Kulinkin
  • B. V. Novikov
  • Dinh Son Thach
  • V. A. Gaisin
  • V. N. Petrov

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Coefficients
  • Crystals
  • Emission
  • Emission Spectra
  • Energy
  • Energy Bands
  • Hard Copy
  • High Pressure
  • Hydrostatic Pressure
  • Luminescence
  • Physical Properties
  • Quantum Dots
  • Spectra
  • Static Pressure
  • Substrates
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing