Photoelectronic Properties of InAs/GaAs Nanostructures With Combined Quantum Well and Quantum Dot Layers Grown by Metal-Organic Vapor Phase Epitaxy

Abstract

Combination of quantum well (QW) and QD layers in the GaAs/In(x) GA(-x)AS nanostructures obtained by MOVPE result not only in well known "red shift" of the QD PL spectrum but also to splitting of the PL spectrum and of the photosensitivity spectrum of the QW. "Red shift" of one of these spectral features relative to the other is explained by diffusion of In from the QDs to the QW at their heterointerface.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013111

Entities

People

  • B. N. Zvonkov
  • D. O. Filatov
  • I. A. Karpovich
  • N. V. Baidus
  • S. B. Levichev

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Crystal Structure
  • Crystals
  • Ground State
  • Hard Copy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanostructures
  • Optical Absorption
  • Quantum Dots
  • Quantum Wells
  • Quantum Wires
  • Spectra
  • Technical Information Centers
  • Universities
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing