Optical Properties and Hopping Conductivity in InAs/GaAs Quantum Dot Structures

Abstract

We have investigated the photoluminescence, persistent photoconductivity and hopping conductivity of InAs/GaAs quantum dot structures grown on vicinal substrates. The photoconductivity has been investigated for wavelengths lambda = 791 to 1120 nm in the temperature range T = 4.2-300 K. At low temperatures we observe positive persistent photoconductivity, which is attributed to the spatial separation of photogenerated carriers. Variable range hopping conductivity (VRHC) has been observed at low temperatures. Upon reducing the temperature the resistivity shows a crossover near 3.2 K from two-dimensional Mott VRHC.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013113

Entities

People

  • A. V. Demin
  • A. V. Golikov
  • R. A. Lunin
  • V. A. Kulbachinskii
  • V. G. Kytin

Organizations

  • University of Amsterdam

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Barometric Pressure
  • Conductivity
  • Electron Density
  • Electrons
  • Energy Levels
  • Filters
  • Free Electrons
  • Illumination
  • Low Temperature
  • Mobility
  • Optical Properties
  • Photoconductivity
  • Photoluminescence
  • Quantum Dots
  • Semiconductors
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing