Charge Separation in Scrolled Heterostructures

Abstract

We calculate strains in the wall of semiconductor InAs/GaAs nanotube and their effects on the band edges. We show that the maxima of the electron and hole wave functions are shifted in opposite directions from the middle of the tube wall.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013115

Entities

People

  • V. M. Osadchii
  • V. Ya. Prinz

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bulk Materials
  • Charge Carriers
  • Crystal Lattices
  • Electron Gas
  • Electrons
  • Energy Bands
  • Energy Levels
  • Films
  • Free Electrons
  • Fullerenes
  • Ground State
  • Materials
  • Materials Processing
  • Quantum Dots
  • Semiconductors
  • Valence Bands
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics