Size Quantization and Excited States of Associated and Isolated InAs Quantum Dots

Abstract

Spectra of photoluminescence (PL) including its decay time spectra and spectra of PL excitation (PLE) of heteroepitaxial structures with quantum dots (QD) InAs/GaAs have been studied. Structures had been grown by submonolayer migration-enhanced epitaxy (SMEE) mode on vicinal substrates GaAs at deposited InAs thickness close to critical (1.8 monolayer (ML)). It has been shown that PL structure under study is formed by the recombination emission of different QD families. One family consists of associated QD groups confined by vicinal terraces discretely broadened due to step bunching effect, another family of isolated QD separated from rest QD array due to wetting layer (WL) ruptures at terrace edges. Excited exciton states of various QD groups have been detected. Their particular features are determined depending on the temperature, power and wavelength of photoexcitation.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013117

Entities

People

  • B. V. Novikov
  • Dinh Son Thach
  • G. Gobsch
  • S. Yu. Verbin
  • V. G. Talalaev

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • B Band
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Excitation
  • Ground State
  • Hard Copy
  • High Density
  • Low Temperature
  • Quantum Dots
  • Quantum Wires
  • Radiative Transfer
  • Short Wavelengths
  • Spectra
  • Technical Information Centers
  • Two Dimensional
  • Wave Functions

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing