Spectroscopy of Inhomogeneous Strain in Silicon-Based Quantum Dots

Abstract

Resonant tunneling is employed to probe the inhomogeneous strain in silicon-based quantum dots. When submicron structures are etched from a p-Si/SiGe/Si double-barrier heterostructure, the resonant I (V) peaks shift and develop a fine structure consistent with pronounced strain relaxation in the SiGe quantum well. We calculate the strain dependence on dot size by finite element techniques and convert the strain to an effective lateral confining potential. by sufficiently small dots, we find that the inhomogeneous strain confines carriers not only to the central core. as in GaAs-based dots, but also to a ring-like region at the perimeter. We probe the resulting density of states by magnetotunneling I (V, B) measurements.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013120

Entities

People

  • A. Zaslavsky
  • B. R. Perkins
  • Jun Liu
  • Lambert Ben Freund

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Experimental Data
  • Heterojunctions
  • Magnetic Fields
  • Magnetic Properties
  • Materials
  • Nanostructures
  • Quantum Dots
  • Quantum Tunneling
  • Quantum Wells
  • Quantum Wires
  • Self Assembly
  • Semiconductor Lasers
  • Semiconductors
  • Spectroscopy
  • Technical Information Centers
  • Tunneling

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing