Effect of Alloying on Growth of GeSi Self-Assembled Islands

Abstract

The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated at different growth temperatures by the atomic force microscopy and X-ray diffraction. The correlation between the sizes and composition of islands has been obtained. The Ostwald ripening and alloying significantly broaden the islands sizes distribution at growth temperature 750 degrees C.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013121

Entities

People

  • D. N. Lobanov
  • N. V. Vostokov
  • S. A. Gusev
  • Yu. N. Drozdov
  • Z. F. Krasil'nik

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Communication Systems
  • Curing
  • Diffraction
  • Diffusion
  • Electron Microscopy
  • Hard Copy
  • Materials
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanostructures
  • Physics
  • Substrates
  • Technical Information Centers
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Thin Film Deposition Science.