Raman Scattering from Ge Nanocrystals on Si Substrates: Problems and Solutions

Abstract

This document demonstrates that in many cases the experimentally observed peak at about 300/cm is in fact originating from the Si substrate. We have found that the most promising ways to tackle this problem are (I) use of resonant Raman and/or (2) use of polarized Raman scattering. The former is more efficient to excite the Ge nanoclusters but also results in stronger photoluminescence which can make the measurement more difficult. Our results also demonstrate that Raman scattering can be used as an efficient probe only if Ge concentration exceeds a certain value.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2000
Accession Number
ADP013122

Entities

People

  • A. V. Kolobov
  • H. Oyanagi
  • Kōichi Tanaka
  • Y. Maeda
  • Z. Cernosek

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Excitation
  • Ion Implantation
  • Ion Lasers
  • Lasers
  • Light Sources
  • Measurement
  • Nanocrystals
  • Nanostructures
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Spectra
  • Spectroscopy
  • Substrates
  • Technical Information Centers
  • X Rays

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Systems Analysis and Design