Resonant Acceptors States in Ge/Ge(1-x)Si(x) MQW Heterostructures
Abstract
New nonvariational theoretical approach allowing to calculate both the localized and the continuum states of charge carriers in QW heterostructures in the presence of the Coulomb potential has been developed. The method has been used to calculated the energy spectra of shallow acceptors in strained Ge/GeSi MQW heterostructures. Optical transitions from the acceptor ground states to the resonant states have been revealed in the measured far IR photoconductivity spectra of the heterostructures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 2000
- Accession Number
- ADP013124
Entities
People
- D. V. Kozlov
- I. V. Erofeeva
- O. A. Kuznetsov
- V. I. Gavrilenko
- V. Ya. Aleshkin
Organizations
- Russian Academy of Sciences